VS-E5TH3012S2L-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.07 EUR |
| 10+ | 6 EUR |
| 50+ | 4.69 EUR |
| 100+ | 4.26 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3 Stücke
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Technische Details VS-E5TH3012S2L-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 113 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Weitere Produktangebote VS-E5TH3012S2L-M3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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VS-E5TH3012S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 30A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 113 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
VS-E5TH3012S2L-M3 | Vishay Semiconductors |
Rectifiers 30A, 1200V, "H" Series GEN 5 Fred PT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
VS-E5TH3012S2L-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 30A; 32ns; D2PAK,TO263AB; Ufmax: 2.5V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Reverse recovery time: 32ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK; TO263AB Max. forward voltage: 2.5V Max. forward impulse current: 0.24kA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| VS-E5TH3012S2L-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| VS-E5TH3012S2L-M3 |
|
Hersteller: Vishay Semiconductors
Rectifiers 30A, 1200V, "H" Series GEN 5 Fred PT
Rectifiers 30A, 1200V, "H" Series GEN 5 Fred PT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-E5TH3012S2L-M3 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; 32ns; D2PAK,TO263AB; Ufmax: 2.5V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; TO263AB
Max. forward voltage: 2.5V
Max. forward impulse current: 0.24kA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; 32ns; D2PAK,TO263AB; Ufmax: 2.5V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; TO263AB
Max. forward voltage: 2.5V
Max. forward impulse current: 0.24kA
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH