VS-EPU6006LHN3 Vishay Semiconductors
auf Bestellung 986 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.44 EUR |
| 10+ | 4.88 EUR |
| 100+ | 4 EUR |
| 500+ | 3.19 EUR |
| 1000+ | 3.12 EUR |
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Technische Details VS-EPU6006LHN3 Vishay Semiconductors
Description: DIODE GEN PURP 600V 60A TO247AD, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 110 ns, Technology: Standard, Current - Average Rectified (Io): 60A, Supplier Device Package: TO-247AD, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A, Current - Reverse Leakage @ Vr: 30 µA @ 600 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote VS-EPU6006LHN3 nach Preis ab 2.73 EUR bis 7.15 EUR
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VS-EPU6006LHN3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 600V 60A TO247ADPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 895 Stücke: Lieferzeit 10-14 Tag (e) |
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