VS-ETF150Y65U Vishay Semiconductors
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Technische Details VS-ETF150Y65U Vishay Semiconductors
Description: IGBT MOD 650V 142A EMIPAK-2B, Packaging: Tray, Package / Case: EMIPAK-2B, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.06V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: EMIPAK-2B, IGBT Type: Trench, Current - Collector (Ic) (Max): 142 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 417 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 6.6 nF @ 30 V.
Weitere Produktangebote VS-ETF150Y65U
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-ETF150Y65U | Hersteller : Vishay |
 EMIPAK-2B PRESSFIT POWER MODULE 3-LEVELS HALF-BRIDGE INVERTER STAGE, 150 A |
Produkt ist nicht verfügbar |
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VS-ETF150Y65U | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 650V 142A EMIPAK-2B Packaging: Tray Package / Case: EMIPAK-2B Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.06V @ 15V, 100A NTC Thermistor: No Supplier Device Package: EMIPAK-2B IGBT Type: Trench Current - Collector (Ic) (Max): 142 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 417 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 6.6 nF @ 30 V |
Produkt ist nicht verfügbar |