
VS-ETH1506-1-M3 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details VS-ETH1506-1-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 29 ns, Technology: Standard, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-262-3, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A, Current - Reverse Leakage @ Vr: 15 µA @ 600 V.
Weitere Produktangebote VS-ETH1506-1-M3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
VS-ETH1506-1-M3 | Hersteller : Vishay Semiconductors |
![]() |
Produkt ist nicht verfügbar |
|
VS-ETH1506-1-M3 | Hersteller : VISHAY |
![]() Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 160A; IPAK,TO262AA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: IPAK; TO262AA Kind of package: tube Max. forward voltage: 2.45V Reverse recovery time: 29ns Max. forward impulse current: 160A |
Produkt ist nicht verfügbar |