
VS-ETH1506-1HM3 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 600V 15A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details VS-ETH1506-1HM3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262AA, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 42 ns, Technology: Standard, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-262AA, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A, Current - Reverse Leakage @ Vr: 15 µA @ 600 V, Grade: Automotive, Qualification: AEC-Q101.
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VS-ETH1506-1HM3 | Hersteller : Vishay Semiconductors |
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