VS-ETH3006S-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 2.94 EUR |
50+ | 2.37 EUR |
100+ | 1.95 EUR |
500+ | 1.65 EUR |
1000+ | 1.4 EUR |
2000+ | 1.33 EUR |
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Technische Details VS-ETH3006S-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 26 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A, Current - Reverse Leakage @ Vr: 30 µA @ 600 V.
Weitere Produktangebote VS-ETH3006S-M3 nach Preis ab 2.68 EUR bis 4.37 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
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VS-ETH3006S-M3 | Hersteller : Vishay Semiconductors | Rectifiers 30A 600V Hyperfast 26ns |
auf Bestellung 4390 Stücke: Lieferzeit 14-28 Tag (e) |
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VS-ETH3006S-M3 | Hersteller : Vishay | Diode Switching 600V 30A 3-Pin(2+Tab) D2PAK Tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-ETH3006S-M3 Produktcode: 154715 |
Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden |
Produkt ist nicht verfügbar
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VS-ETH3006S-M3 | Hersteller : Vishay | Diode Switching 600V 30A 3-Pin(2+Tab) D2PAK Tube |
Produkt ist nicht verfügbar |
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VS-ETH3006S-M3 | Hersteller : Vishay | Diode Switching 600V 30A 3-Pin(2+Tab) D2PAK Tube |
Produkt ist nicht verfügbar |
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VS-ETH3006S-M3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; 70ns; D2PAK; Ufmax: 1.8V; Ir: 300uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Reverse recovery time: 70ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 20pF Case: D2PAK Max. forward voltage: 1.8V Max. forward impulse current: 180A Leakage current: 0.3mA Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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VS-ETH3006S-M3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; 70ns; D2PAK; Ufmax: 1.8V; Ir: 300uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Reverse recovery time: 70ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 20pF Case: D2PAK Max. forward voltage: 1.8V Max. forward impulse current: 180A Leakage current: 0.3mA Kind of package: tube |
Produkt ist nicht verfügbar |