VS-ETH3006STRR-M3

VS-ETH3006STRR-M3 Vishay General Semiconductor - Diodes Division


vs-eth3006s-m3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO263AB
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
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Technische Details VS-ETH3006STRR-M3 Vishay General Semiconductor - Diodes Division

Description: DIODE STANDARD 600V 30A TO263AB, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 30A, Technology: Standard, Reverse Recovery Time (trr): 26 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 30 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 600 V.

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VS-ETH3006STRR-M3 VS-ETH3006STRR-M3 Hersteller : Vishay Semiconductors vs-eth3006s-m3.pdf Rectifiers 30A 600V Hyperfast 26ns
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VS-ETH3006STRR-M3 Hersteller : VISHAY vs-eth3006s-m3.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 26ns; D2PAK,TO263AB; Ufmax: 2.65V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 26ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; TO263AB
Max. forward voltage: 2.65V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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