VS-ETL015Y120H Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: IGBT MOD 1200V 22A 89W EMIPAK-2B
Packaging: Bulk
Package / Case: EMIPAK-2B
Mounting Type: Chassis Mount
Input: Standard
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.03V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: EMIPAK-2B
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 75 µA
Input Capacitance (Cies) @ Vce: 1.07 nF @ 30 V
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Technische Details VS-ETL015Y120H Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 22A 89W EMIPAK-2B, Packaging: Bulk, Package / Case: EMIPAK-2B, Mounting Type: Chassis Mount, Input: Standard, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.03V @ 15V, 15A, NTC Thermistor: Yes, Supplier Device Package: EMIPAK-2B, IGBT Type: Trench, Part Status: Active, Current - Collector (Ic) (Max): 22 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 89 W, Current - Collector Cutoff (Max): 75 µA, Input Capacitance (Cies) @ Vce: 1.07 nF @ 30 V.
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Preis ohne MwSt |
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VS-ETL015Y120H | Hersteller : Vishay Semiconductors |
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