VS-ETL1506-1-M3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 2.9 EUR |
| 10+ | 2.62 EUR |
| 100+ | 2.04 EUR |
| 500+ | 1.68 EUR |
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Technische Details VS-ETL1506-1-M3 Vishay Semiconductors
Description: DIODE GEN PURP 600V 15A TO262-3, Technology: Standard, Reverse Recovery Time (trr): 210 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Bulk, Current - Reverse Leakage @ Vr: 15 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-262-3, Current - Average Rectified (Io): 15A.
Weitere Produktangebote VS-ETL1506-1-M3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-ETL1506-1-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 600V 15A TO262-3Technology: Standard Reverse Recovery Time (trr): 210 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Bulk Current - Reverse Leakage @ Vr: 15 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-262-3 Current - Average Rectified (Io): 15A |
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