VS-ETL1506STRR-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details VS-ETL1506STRR-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB, Current - Reverse Leakage @ Vr: 15 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-263AB (D²PAK), Current - Average Rectified (Io): 15A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote VS-ETL1506STRR-M3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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VS-ETL1506STRR-M3 | Hersteller : Vishay Semiconductors |
Rectifiers 15A 600V Ultrafast 210ns |
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