VS-FB190SA10 Vishay

Транз. Пол. БМ N-MOSFET SOT-227-4 (miniBLOC) Udss=100V; Id=190A; Pdmax=568W; Rds=6.5mOhm @ 180A, 10V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
1+ | 195.80 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details VS-FB190SA10 Vishay
Description: MOSFET N-CH 100V 190A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 190A (Tj), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V, Power Dissipation (Max): 568W (Tc), Vgs(th) (Max) @ Id: 4.35V @ 250µA, Supplier Device Package: SOT-227, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V.
Weitere Produktangebote VS-FB190SA10
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
VS-FB190SA10 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
VS-FB190SA10 | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190A (Tj) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V Power Dissipation (Max): 568W (Tc) Vgs(th) (Max) @ Id: 4.35V @ 250µA Supplier Device Package: SOT-227 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V |
Produkt ist nicht verfügbar |
|
![]() |
VS-FB190SA10 | Hersteller : Vishay Semiconductors |
![]() |
Produkt ist nicht verfügbar |