VS-GB100NH120N Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK
Input Capacitance (Cies) @ Vce: 8.58 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 833 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
Operating Temperature: 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Packaging: Bulk
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Technische Details VS-GB100NH120N Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK, Input Capacitance (Cies) @ Vce: 8.58 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 833 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 200 A, Supplier Device Package: Double INT-A-PAK, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A, Operating Temperature: 150°C (TJ), Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Double INT-A-PAK (3 + 4), Packaging: Bulk.
Weitere Produktangebote VS-GB100NH120N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| VS-GB100NH120N | Hersteller : Vishay Semiconductors | IGBT Modules Output & SW Modules - DIAP IGBT |
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