VS-GB150TH120N Vishay General Semiconductor - Diodes Division

Description: IGBT MOD 1200V 300A INT-A-PAK, Packaging: Bulk, Package / Case: Double INT-A-PAK (3 + 4), Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: Double INT-A-PAK, Current - Collector (Ic) (Max): 300 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1008 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 11 nF @ 25 V.