VS-GB200NH120N Vishay General Semiconductor - Diodes Division

Description: IGBT MOD 1200V 420A INT-A-PAK, Input Capacitance (Cies) @ Vce: 18 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 1562 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 420 A, Supplier Device Package: Double INT-A-PAK, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Double INT-A-PAK (3 + 4), Packaging: Bulk.