
VS-GT300YH120N Vishay Semiconductors
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 302.33 EUR |
12+ | 274.03 EUR |
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Technische Details VS-GT300YH120N Vishay Semiconductors
Description: IGBT MOD 1200V 341A INT-A-PAK, Packaging: Bulk, Package / Case: Double INT-A-PAK (3 + 8), Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ), NTC Thermistor: No, Supplier Device Package: Double INT-A-PAK, IGBT Type: Trench, Current - Collector (Ic) (Max): 341 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1042 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 36 nF @ 30 V.
Weitere Produktangebote VS-GT300YH120N
Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-GT300YH120N | Hersteller : Vishay |
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VS-GT300YH120N | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: Double INT-A-PAK (3 + 8) Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ) NTC Thermistor: No Supplier Device Package: Double INT-A-PAK IGBT Type: Trench Current - Collector (Ic) (Max): 341 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1042 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 36 nF @ 30 V |
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VS-GT300YH120N | Hersteller : VISHAY |
![]() Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 300A; Trench Type of module: IGBT Semiconductor structure: diode/transistor Topology: MOSFET half-bridge + serial diodes Max. off-state voltage: 1.2kV Collector current: 300A Case: Dual INT-A-Pak Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 720A Technology: Trench Mechanical mounting: screw |
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