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VS-GT300YH120N Vishay Semiconductors


vs-gt300yh120n.pdf
Hersteller: Vishay Semiconductors
IGBT Modules Output & SW Modules - DIAP IGBT
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12+373.91 EUR
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Technische Details VS-GT300YH120N Vishay Semiconductors

Description: IGBT MOD 1200V 341A INT-A-PAK, Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Double INT-A-PAK (3 + 8), Packaging: Bulk, Input Capacitance (Cies) @ Vce: 36 nF @ 30 V, Current - Collector Cutoff (Max): 300 µA, Power - Max: 1042 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 341 A, IGBT Type: Trench, Supplier Device Package: Double INT-A-PAK, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ), Operating Temperature: -40°C ~ 150°C (TJ).

Weitere Produktangebote VS-GT300YH120N

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VS-GT300YH120N VS-GT300YH120N Vishay General Semiconductor - Diodes Division vs-gt300yh120n.pdf Description: IGBT MOD 1200V 341A INT-A-PAK
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 8)
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 36 nF @ 30 V
Current - Collector Cutoff (Max): 300 µA
Power - Max: 1042 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 341 A
IGBT Type: Trench
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ)
Operating Temperature: -40°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT300YH120N VISHAY vs-gt300yh120n.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 300A; Trench
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: MOSFET half-bridge + serial diodes
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: Dual INT-A-Pak
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 720A
Technology: Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT300YH120N vs-gt300yh120n.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 341A INT-A-PAK
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 8)
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 36 nF @ 30 V
Current - Collector Cutoff (Max): 300 µA
Power - Max: 1042 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 341 A
IGBT Type: Trench
Supplier Device Package: Double INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ)
Operating Temperature: -40°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-GT300YH120N vs-gt300yh120n.pdf
Hersteller: VISHAY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 300A; Trench
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: MOSFET half-bridge + serial diodes
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: Dual INT-A-Pak
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 720A
Technology: Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH