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Technische Details VS-GT400TD60S Vishay
Description: IGBT MODULE 600V 711A INT-A-PAK, Current - Collector Cutoff (Max): 300 µA, Power - Max: 1364 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 711 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: INT-A-PAK, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 400A, Operating Temperature: -40°C ~ 175°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tube.
Weitere Produktangebote VS-GT400TD60S
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
VS-GT400TD60S | Vishay General Semiconductor - Diodes Division |
 Description: IGBT MODULE 600V 711A INT-A-PAKCurrent - Collector Cutoff (Max): 300 µA Power - Max: 1364 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 711 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: INT-A-PAK NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 400A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH |
| VS-GT400TD60S | VISHAY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Collector current: 400A Case: Dual INT-A-Pak LP16mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 1.1kA Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| VS-GT400TD60S |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 711A INT-A-PAK
Current - Collector Cutoff (Max): 300 µA
Power - Max: 1364 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 711 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 400A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
Description: IGBT MODULE 600V 711A INT-A-PAK
Current - Collector Cutoff (Max): 300 µA
Power - Max: 1364 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 711 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 400A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| VS-GT400TD60S |
|
Hersteller: VISHAY
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 400A
Case: Dual INT-A-Pak LP16mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.1kA
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 400A
Case: Dual INT-A-Pak LP16mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.1kA
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH