VS-GT80DA120U Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 139A 658W SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 139 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 658 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
| Anzahl | Preis |
|---|---|
| 1+ | 61.79 EUR |
| 10+ | 46.04 EUR |
| 100+ | 39.58 EUR |
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Technische Details VS-GT80DA120U Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 139A 658W SOT-227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 80A, NTC Thermistor: No, Supplier Device Package: SOT-227, IGBT Type: Trench, Part Status: Active, Current - Collector (Ic) (Max): 139 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 658 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V.
Weitere Produktangebote VS-GT80DA120U
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
VS-GT80DA120U | Vishay Semiconductors |
IGBT Modules 1200V, 80A Tch IGBT SOT-227 Bplr Tnstr |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| VS-GT80DA120U | VISHAY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 80A; SOT227B Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 80A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 170A Technology: Trench Features of semiconductor devices: integrated anti-parallel diode Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| VS-GT80DA120U |
|
Hersteller: Vishay Semiconductors
IGBT Modules 1200V, 80A Tch IGBT SOT-227 Bplr Tnstr
IGBT Modules 1200V, 80A Tch IGBT SOT-227 Bplr Tnstr
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-GT80DA120U |
|
Hersteller: VISHAY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 80A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 80A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 170A
Technology: Trench
Features of semiconductor devices: integrated anti-parallel diode
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 80A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 80A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 170A
Technology: Trench
Features of semiconductor devices: integrated anti-parallel diode
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH