VS-HFA04SD60STR-M3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 3.82 EUR |
| 10+ | 2.43 EUR |
| 100+ | 1.66 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.22 EUR |
| 2000+ | 1.11 EUR |
| 4000+ | 1.09 EUR |
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Technische Details VS-HFA04SD60STR-M3 Vishay Semiconductors
Description: DIODE STANDARD 600V 4A TO252AA, Current - Reverse Leakage @ Vr: 3 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-252AA (DPAK), Current - Average Rectified (Io): 4A, Technology: Standard, Reverse Recovery Time (trr): 42 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote VS-HFA04SD60STR-M3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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VS-HFA04SD60STR-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE STANDARD 600V 4A TO252AACurrent - Reverse Leakage @ Vr: 3 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-252AA (DPAK) Current - Average Rectified (Io): 4A Technology: Standard Reverse Recovery Time (trr): 42 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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