VS-HFA04SD60STRPBF Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 4A TO252AA
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io): 4A
Technology: Standard
Reverse Recovery Time (trr): 42 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details VS-HFA04SD60STRPBF Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 4A TO252AA, Current - Reverse Leakage @ Vr: 3 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Obsolete, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-252AA (DPAK), Current - Average Rectified (Io): 4A, Technology: Standard, Reverse Recovery Time (trr): 42 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
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VS-HFA04SD60STRPBF | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 4A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
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