VS-HFA08TB120S-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE STANDARD 1200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 921 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.81 EUR |
| 50+ | 0.98 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.85 EUR |
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Technische Details VS-HFA08TB120S-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 95 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 16 A, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V.
Weitere Produktangebote VS-HFA08TB120S-M3 nach Preis ab 1.74 EUR bis 1.85 EUR
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VS-HFA08TB120S-M3 | Hersteller : Vishay Semiconductors |
Rectifiers 1200V 8A TO-263 HexFred |
auf Bestellung 8298 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-HFA08TB120S-M3 | Hersteller : Vishay |
Rectifier Diode Switching 8A 95ns 3-Pin(2+Tab) D2PAK Tube |
Produkt ist nicht verfügbar |
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| VS-HFA08TB120S-M3 | Hersteller : VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.2kV; 8A; 160ns; D2PAK,TO263AB; Ufmax: 3.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 160ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK; TO263AB Kind of package: tube Quantity in set/package: 50pcs. Capacitance: 20pF Leakage current: 1mA Max. forward voltage: 3.1V Max. load current: 32A Max. forward impulse current: 130A |
Produkt ist nicht verfügbar |
