Technische Details VS-MURB1520-1-M3 Vishay
Description: DIODE GEN PURP 200V 15A TO262AA, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-262AA, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Weitere Produktangebote VS-MURB1520-1-M3
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VS-MURB1520-1-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 15A TO262AAPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-262AA Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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VS-MURB1520-1-M3 | Hersteller : Vishay Semiconductors |
Rectifiers 200V 15A TO-262 Fred Pt |
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| VS-MURB1520-1-M3 | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 20V; 15A; tube; Ifsm: 200A; IPAK,TO262AA Type of diode: rectifying Mounting: THT Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: IPAK; TO262AA Kind of package: tube Reverse recovery time: 35ns Max. forward impulse current: 200A Max. off-state voltage: 20V Max. load current: 30A Max. forward voltage: 1.05V Load current: 15A |
Produkt ist nicht verfügbar |