VS-SC160FA65 Vishay
Hersteller: Vishay
Schottky Diodes & Rectifiers SOT-227 Silicon Carbide Schottky Barrier Diode, 650 V, 160 A
| Anzahl | Privatkunde |
|---|---|
| 1+ | 140.71 EUR |
| 10+ | 133.68 EUR |
| 25+ | 130.19 EUR |
| 50+ | 125.77 EUR |
| 100+ | 120.48 EUR |
| 250+ | 115.82 EUR |
| 480+ | 113.2 EUR |
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Technische Details VS-SC160FA65 Vishay
Description: DIODE MOD SIC 650V 80A SOT-227, Current - Reverse Leakage @ Vr: 1.6 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.59 V @ 80 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 80A, Diode Configuration: 2 Independent, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Strip.
Weitere Produktangebote VS-SC160FA65 nach Preis ab 116.81 EUR bis 144.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
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VS-SC160FA65 | Vishay |
Description: DIODE MOD SIC 650V 80A SOT-227 Current - Reverse Leakage @ Vr: 1.6 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.59 V @ 80 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 80A Diode Configuration: 2 Independent Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Strip |
auf Bestellung 142 Stücke: Lieferzeit 10-14 Tag (e) |
|
| VS-SC160FA65 |
|
Hersteller: Vishay
Description: DIODE MOD SIC 650V 80A SOT-227
Current - Reverse Leakage @ Vr: 1.6 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.59 V @ 80 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 80A
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Strip
Description: DIODE MOD SIC 650V 80A SOT-227
Current - Reverse Leakage @ Vr: 1.6 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.59 V @ 80 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 80A
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Strip
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 144.24 EUR |
| 10+ | 116.81 EUR |