VS-SC80FA120 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SIC 1200V 40A SOT-227
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.58 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Technische Details VS-SC80FA120 Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SIC 1200V 40A SOT-227, Current - Reverse Leakage @ Vr: 120 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.58 V @ 40 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 40A, Diode Configuration: 2 Independent, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote VS-SC80FA120 nach Preis ab 69.52 EUR bis 94.49 EUR
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VS-SC80FA120 | Vishay |
SiC Schottky Diodes SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 80 A |
auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Vishay
SiC Schottky Diodes SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 80 A
SiC Schottky Diodes SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 80 A
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 94.49 EUR |
| 10+ | 78.09 EUR |
| 100+ | 69.52 EUR |