VS-SF50SA120 Vishay General Semiconductor - Diodes Division

Description: POWER MODULE, SINGLE SWITCH - SI, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Rds On (Max) @ Id, Vgs: 59.2mOhm @ 50A, 15V, Power Dissipation (Max): 238W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 7.11mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 1000 V.