VS-VSKD236/12PBF Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 124.94 EUR |
| 10+ | 87.84 EUR |
| 105+ | 86.61 EUR |
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Technische Details VS-VSKD236/12PBF Vishay Semiconductors
Description: DIODE MOD GP 1200V 115A MAGNAPAK, Current - Reverse Leakage @ Vr: 20 mA @ 1200 V, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: MAGN-A-PAK®, Current - Average Rectified (Io) (per Diode): 115A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: 3-MAGN-A-PAK™, Packaging: Bulk.
Weitere Produktangebote VS-VSKD236/12PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-VSKD236/12PBF | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE MOD GP 1200V 115A MAGNAPAKCurrent - Reverse Leakage @ Vr: 20 mA @ 1200 V Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: MAGN-A-PAK® Current - Average Rectified (Io) (per Diode): 115A Diode Configuration: 1 Pair Common Cathode Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: 3-MAGN-A-PAK™ Packaging: Bulk |
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