VSS8D2M12HM3/I Vishay General Semiconductor - Diodes Division


vss8d2m12.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 120V 1.9A SLIMSMAW
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimSMAW (DO-221AD)
Current - Average Rectified (Io): 1.9A
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
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Technische Details VSS8D2M12HM3/I Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTT 120V 1.9A SLIMSMAW, Current - Reverse Leakage @ Vr: 250 µA @ 120 V, Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 120 V, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: SlimSMAW (DO-221AD), Current - Average Rectified (Io): 1.9A, Capacitance @ Vr, F: 220pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-221AC, SMA Flat Leads, Packaging: Tape & Reel (TR).

Weitere Produktangebote VSS8D2M12HM3/I

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VSS8D2M12HM3/I VSS8D2M12HM3/I Vishay General Semiconductor - Diodes Division vss8d2m12.pdf Description: DIODE SCHOTT 120V 1.9A SLIMSMAW
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimSMAW (DO-221AD)
Current - Average Rectified (Io): 1.9A
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VSS8D2M12HM3/I vss8d2m12.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 120V 1.9A SLIMSMAW
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimSMAW (DO-221AD)
Current - Average Rectified (Io): 1.9A
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH