
VSSAF3N50-M3/6B Vishay General Semiconductor
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4+ | 0.82 EUR |
10+ | 0.63 EUR |
100+ | 0.38 EUR |
500+ | 0.35 EUR |
1000+ | 0.25 EUR |
14000+ | 0.20 EUR |
28000+ | 0.19 EUR |
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Technische Details VSSAF3N50-M3/6B Vishay General Semiconductor
Description: DIODE SCHOTTKY 50V 2.7A DO221AC, Packaging: Tape & Reel (TR), Package / Case: DO-221AC, SMA Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 570pF @ 4V, 1MHz, Current - Average Rectified (Io): 2.7A, Supplier Device Package: DO-221AC (SlimSMA), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1.5 A, Current - Reverse Leakage @ Vr: 1 mA @ 50 V.
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VSSAF3N50-M3/6B | Hersteller : Vishay |
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VSSAF3N50-M3/6B | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 570pF @ 4V, 1MHz Current - Average Rectified (Io): 2.7A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1.5 A Current - Reverse Leakage @ Vr: 1 mA @ 50 V |
Produkt ist nicht verfügbar |