VSSB410S-E3/52T Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE SCHOTTKY 100V 1.9A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 4 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
auf Bestellung 14250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 750+ | 0.26 EUR |
| 1500+ | 0.24 EUR |
| 2250+ | 0.23 EUR |
| 7500+ | 0.22 EUR |
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Technische Details VSSB410S-E3/52T Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.9A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 230pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.9A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 770 mV @ 4 A, Current - Reverse Leakage @ Vr: 250 µA @ 100 V.
Weitere Produktangebote VSSB410S-E3/52T nach Preis ab 0.24 EUR bis 0.65 EUR
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VSSB410S-E3/52T | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 1.9A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 230pF @ 4V, 1MHz Current - Average Rectified (Io): 1.9A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 4 A Current - Reverse Leakage @ Vr: 250 µA @ 100 V |
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