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VT6T1T2R

VT6T1T2R ROHM Semiconductor

datasheet?p=VT6T1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT PNP+PNP -20VCEO-0.2A VMT6
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4+0.98 EUR
1000+0.51 EUR
2500+0.24 EUR
8000+0.17 EUR
24000+0.15 EUR
48000+0.14 EUR
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Technische Details VT6T1T2R ROHM Semiconductor

Description: PNP+PNP GENERAL PURPOSE AMPLIFIC, Supplier Device Package: VMT6, Frequency - Transition: 350MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 20V, Current - Collector (Ic) (Max): 200mA, Power - Max: 150mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).

Weitere Produktangebote VT6T1T2R

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
VT6T1T2R VT6T1T2R Rohm Semiconductor datasheet?p=VT6T1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Supplier Device Package: VMT6
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VT6T1T2R VT6T1T2R Rohm Semiconductor datasheet?p=VT6T1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Supplier Device Package: VMT6
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VT6T1T2R datasheet?p=VT6T1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VT6T1T2R
Hersteller: Rohm Semiconductor
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Supplier Device Package: VMT6
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VT6T1T2R datasheet?p=VT6T1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VT6T1T2R
Hersteller: Rohm Semiconductor
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Supplier Device Package: VMT6
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH