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VT6T1T2R

VT6T1T2R ROHM Semiconductor

datasheet?p=VT6T1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT PNP+PNP -20VCEO-0.2A VMT6
auf Bestellung 2498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.82 EUR
1000+0.43 EUR
2500+0.2 EUR
8000+0.14 EUR
24000+0.13 EUR
48000+0.12 EUR
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Technische Details VT6T1T2R ROHM Semiconductor

Description: PNP+PNP GENERAL PURPOSE AMPLIFIC, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 150mW, Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 20V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V, Frequency - Transition: 350MHz, Supplier Device Package: VMT6.

Weitere Produktangebote VT6T1T2R

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
VT6T1T2R VT6T1T2R Hersteller : Rohm Semiconductor datasheet?p=VT6T1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 350MHz
Supplier Device Package: VMT6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VT6T1T2R VT6T1T2R Hersteller : Rohm Semiconductor datasheet?p=VT6T1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 350MHz
Supplier Device Package: VMT6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH