VTVS12GSMF-M3-18 Vishay General Semiconductor



Hersteller: Vishay General Semiconductor
ESD Protection Diodes / TVS Diodes 400W -/+30kV -/+2% Vf1.8V Uni-dir N-Ch1
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Technische Details VTVS12GSMF-M3-18 Vishay General Semiconductor

Category: Unidirectional TVS SMD diodes, Description: Diode: TVS; 400W; 14.41V; 19.53A; unidirectional; DO219AB,SMF, Type of diode: TVS, Peak pulse power dissipation: 0.4kW, Max. off-state voltage: 12.4V, Breakdown voltage: 14.41V, Max. forward impulse current: 19.53A, Semiconductor structure: unidirectional, Case: DO219AB; SMF, Mounting: SMD, Leakage current: 50nA, Technology: TransZorb®.

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VTVS12GSMF-M3-18 VTVS12GSMF-M3-18 VISHAY Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.41V; 19.53A; unidirectional; DO219AB,SMF
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.4V
Breakdown voltage: 14.41V
Max. forward impulse current: 19.53A
Semiconductor structure: unidirectional
Case: DO219AB; SMF
Mounting: SMD
Leakage current: 50nA
Technology: TransZorb®
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VTVS12GSMF-M3-18
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.41V; 19.53A; unidirectional; DO219AB,SMF
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.4V
Breakdown voltage: 14.41V
Max. forward impulse current: 19.53A
Semiconductor structure: unidirectional
Case: DO219AB; SMF
Mounting: SMD
Leakage current: 50nA
Technology: TransZorb®
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH