W6672TJ320 IXYS
Hersteller: IXYS
Description: DIODE GEN PURP 1.75KV 6672A -
Current - Reverse Leakage @ Vr: 100 mA @ 1750 V
Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 5000 A
Voltage - DC Reverse (Vr) (Max): 1750 V
Operating Temperature - Junction: -40°C ~ 160°C
Supplier Device Package: TO-200AF
Current - Average Rectified (Io): 6672A
Technology: Standard
Reverse Recovery Time (trr): 52 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
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Technische Details W6672TJ320 IXYS
Description: DIODE GEN PURP 1.75KV 6672A -, Current - Reverse Leakage @ Vr: 100 mA @ 1750 V, Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 5000 A, Voltage - DC Reverse (Vr) (Max): 1750 V, Operating Temperature - Junction: -40°C ~ 160°C, Supplier Device Package: TO-200AF, Current - Average Rectified (Io): 6672A, Technology: Standard, Reverse Recovery Time (trr): 52 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: TO-200AF, Packaging: Box.
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W6672TJ320 | Hersteller : IXYS |
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