W66AP6NBQAGJ TR Winbond Electronics
Hersteller: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 200TFBGA
Memory Organization: 64M x 16
Access Time: 3.6 ns
Memory Interface: LVSTL_11
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 1.867 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Memory Type: Volatile
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
Memory Size: 1Gbit
Mounting Type: Surface Mount
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Technische Details W66AP6NBQAGJ TR Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 200TFBGA, Memory Organization: 64M x 16, Access Time: 3.6 ns, Memory Interface: LVSTL_11, Write Cycle Time - Word, Page: 18ns, Supplier Device Package: 200-TFBGA (10x14.5), Memory Format: DRAM, Clock Frequency: 1.867 GHz, Technology: SDRAM - Mobile LPDDR4, Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V, Operating Temperature: -40°C ~ 105°C (TC), Memory Type: Volatile, Package / Case: 200-TFBGA, Packaging: Tape & Reel (TR), Memory Size: 1Gbit, Mounting Type: Surface Mount.
Weitere Produktangebote W66AP6NBQAGJ TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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W66AP6NBQAGJ TR | Hersteller : Winbond |
DRAM 1Gb LPDDR4, x16, 1866MHz, -40C-105C, T&R |
Produkt ist nicht verfügbar |