W66AP6NBUAFJ Winbond Electronics
Hersteller: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 200WFBGA
Memory Organization: 64M x 16
Access Time: 3.6 ns
Memory Interface: LVSTL_11
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 1.6 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Memory Type: Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Packaging: Tray
Produktrezensionen
Produktbewertung abgeben
Technische Details W66AP6NBUAFJ Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 200WFBGA, Memory Organization: 64M x 16, Access Time: 3.6 ns, Memory Interface: LVSTL_11, Write Cycle Time - Word, Page: 18ns, Supplier Device Package: 200-WFBGA (10x14.5), Memory Format: DRAM, Clock Frequency: 1.6 GHz, Technology: SDRAM - Mobile LPDDR4, Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V, Operating Temperature: -40°C ~ 105°C (TC), Memory Type: Volatile, Memory Size: 1Gbit, Mounting Type: Surface Mount, Package / Case: 200-WFBGA, Packaging: Tray.
Weitere Produktangebote W66AP6NBUAFJ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
W66AP6NBUAFJ | Hersteller : Winbond |
DRAM 1Gb LPDDR4, x16, 1600MHz, -40C-105C |
Produkt ist nicht verfügbar |