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| Anzahl | Preis |
|---|---|
| 1+ | 5.63 EUR |
| 10+ | 5.12 EUR |
| 100+ | 4.52 EUR |
| 240+ | 4.42 EUR |
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Technische Details W949D2DBJX5E Winbond
Description: IC DRAM 512MBIT PAR 90VFBGA, Packaging: Tray, Package / Case: 90-TFBGA, Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Volatile, Operating Temperature: -25°C ~ 85°C (TC), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR, Clock Frequency: 200 MHz, Memory Format: DRAM, Supplier Device Package: 90-VFBGA (8x13), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 5 ns, Memory Organization: 16M x 32, DigiKey Programmable: Not Verified.
Weitere Produktangebote W949D2DBJX5E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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W949D2DBJX5E | Hersteller : Winbond Electronics |
 Description: IC DRAM 512MBIT PAR 90VFBGAPackaging: Tray Package / Case: 90-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -25°C ~ 85°C (TC) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 200 MHz Memory Format: DRAM Supplier Device Package: 90-VFBGA (8x13) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5 ns Memory Organization: 16M x 32 DigiKey Programmable: Not Verified |
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