| Anzahl | Preis |
|---|---|
| 1+ | 5.35 EUR |
| 10+ | 4.86 EUR |
| 25+ | 4.75 EUR |
| 50+ | 4.49 EUR |
| 100+ | 4.01 EUR |
| 240+ | 4 EUR |
| 1200+ | 3.91 EUR |
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Technische Details W949D2DBJX5E Winbond
Description: IC DRAM 512MBIT PAR 90VFBGA, DigiKey Programmable: Not Verified, Memory Organization: 16M x 32, Access Time: 5 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 15ns, Supplier Device Package: 90-VFBGA (8x13), Memory Format: DRAM, Clock Frequency: 200 MHz, Technology: SDRAM - Mobile LPDDR, Voltage - Supply: 1.7V ~ 1.95V, Operating Temperature: -25°C ~ 85°C (TC), Memory Type: Volatile, Memory Size: 512Mbit, Mounting Type: Surface Mount, Package / Case: 90-TFBGA, Packaging: Tray.
Weitere Produktangebote W949D2DBJX5E
| Foto | Bezeichnung | Hersteller | Beschreibung |
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W949D2DBJX5E | Hersteller : Winbond Electronics |
 Description: IC DRAM 512MBIT PAR 90VFBGADigiKey Programmable: Not Verified Memory Organization: 16M x 32 Access Time: 5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 15ns Supplier Device Package: 90-VFBGA (8x13) Memory Format: DRAM Clock Frequency: 200 MHz Technology: SDRAM - Mobile LPDDR Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -25°C ~ 85°C (TC) Memory Type: Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 90-TFBGA Packaging: Tray |
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