Technische Details WAS350M12BM3 Wolfspeed
Description: MOSFET 2N-CH 1200V 417A, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 417A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V, Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V, Vgs(th) (Max) @ Id: 3.6V @ 85mA, Part Status: Active.
Weitere Produktangebote WAS350M12BM3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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WAS350M12BM3 | Wolfspeed, Inc. |
 Description: MOSFET 2N-CH 1200V 417APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 417A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 85mA Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WAS350M12BM3 |
|
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 417A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 85mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 417A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 85mA
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH