Technische Details WG40N65DFJQ WeEn Semiconductors
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 15A, Power dissipation: 26W, Case: SOT1293; TO3PF, Gate-emitter voltage: ±20V, Pulsed collector current: 120A, Mounting: THT, Gate charge: 173nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode.
Weitere Produktangebote WG40N65DFJQ
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| WG40N65DFJQ | Hersteller : WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 26W Case: SOT1293; TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 173nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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