WG40N65DFWQ WeEn Semiconductors
Hersteller: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 125W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 173nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 378ns
Features of semiconductor devices: integrated anti-parallel diode
| Anzahl | Preis |
|---|---|
| 27+ | 2.7 EUR |
| 30+ | 2.43 EUR |
| 34+ | 2.14 EUR |
| 38+ | 1.93 EUR |
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Technische Details WG40N65DFWQ WeEn Semiconductors
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 40A; 125W; TO247-3, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 40A, Power dissipation: 125W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 120A, Mounting: THT, Gate charge: 173nC, Kind of package: tube, Turn-on time: 95ns, Turn-off time: 378ns, Features of semiconductor devices: integrated anti-parallel diode.
Weitere Produktangebote WG40N65DFWQ nach Preis ab 1.74 EUR bis 5.24 EUR
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WG40N65DFWQ | Hersteller : WeEn Semiconductors |
IGBTs WG40N65DFW/SOT429/STANDARD MARKING * HORIZONTAL, RAIL PACK |
auf Bestellung 495 Stücke: Lieferzeit 10-14 Tag (e) |
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