WMO080N10HG2 WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 53.7A; Idm: 340A; 108.7W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 53.7A, Power dissipation: 108.7W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 8mΩ, Mounting: SMD, Kind of channel: enhancement, Pulsed drain current: 340A, Gate charge: 21nC, Kind of package: reel; tape.