WMO080N10HG2 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 53.7A; Idm: 340A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 53.7A
Pulsed drain current: 340A
Power dissipation: 108.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 53.7A; Idm: 340A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 53.7A
Pulsed drain current: 340A
Power dissipation: 108.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 65+ | 1.12 EUR |
| 94+ | 0.77 EUR |
| 99+ | 0.73 EUR |
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Technische Details WMO080N10HG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 53.7A; Idm: 340A; 108.7W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 53.7A, Pulsed drain current: 340A, Power dissipation: 108.7W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 8mΩ, Mounting: SMD, Gate charge: 21nC, Kind of package: reel; tape, Kind of channel: enhancement.