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WMSC008H12B1P6T Ween


Hersteller: Ween
WMSC008H12B1P/WeEnPACK-B1/STANDARD MARKING*TRAY PACK,EPE OR BLISTER
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Technische Details WMSC008H12B1P6T Ween

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 153A, Topology: MOSFET half-bridge; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 8mΩ, Pulsed drain current: 300A, Power dissipation: 244W, Technology: SiC, Gate-source voltage: -4...18V, Mechanical mounting: screw.

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WMSC008H12B1P6T Hersteller : WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CE064EDAC100D6&compId=WMSC008H12B1P6T.pdf?ci_sign=e232c0757dee7bd2d1c2df53cb2b58987cd56b96 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 153A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 8mΩ
Pulsed drain current: 300A
Power dissipation: 244W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH