WMSC008H12B1P6T WeEn Semiconductors
Hersteller: WeEn Semiconductors
MOSFET Modules WMSC008H12B1P/WeEnPACK-B1/STANDARD MARKING*TRAY PACK,EPE OR BLISTER
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Technische Details WMSC008H12B1P6T WeEn Semiconductors
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 153A, Topology: MOSFET half-bridge; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 8mΩ, Pulsed drain current: 300A, Power dissipation: 244W, Technology: SiC, Gate-source voltage: -4...18V, Mechanical mounting: screw.
Weitere Produktangebote WMSC008H12B1P6T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| WMSC008H12B1P6T | WeEn Semiconductors |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 153A Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 8mΩ Pulsed drain current: 300A Power dissipation: 244W Technology: SiC Gate-source voltage: -4...18V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 16 Stücke Im Einkaufswagen Stück im Wert von UAH |
| WMSC008H12B1P6T |
|
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 153A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 8mΩ
Pulsed drain current: 300A
Power dissipation: 244W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 153A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 8mΩ
Pulsed drain current: 300A
Power dissipation: 244W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen
Stück im Wert von UAH