WMSC008H12B1P6T WeEn Semiconductors
Hersteller: WeEn Semiconductors
MOSFET Modules WMSC008H12B1P/WeEnPACK-B1/STANDARD MARKING*TRAY PACK,EPE OR BLISTER
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Lieferzeit:
178-182 Tag (e)
Mindestmenge:
120 Stücke
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Technische Details WMSC008H12B1P6T WeEn Semiconductors
Category: Transistor modules, Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W, Pulsed drain current: 300A, Type of semiconductor module: MOSFET transistor, Power dissipation: 244W, Technology: SiC, Drain current: 153A, Drain-source voltage: 1.2kV, Mechanical mounting: screw, Electrical mounting: Press-in PCB, Gate-source voltage: -4...18V, Semiconductor structure: transistor/transistor, On-state resistance: 8mΩ, Topology: MOSFET half-bridge; NTC thermistor.
Weitere Produktangebote WMSC008H12B1P6T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| WMSC008H12B1P6T | WeEn Semiconductors |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W Pulsed drain current: 300A Type of semiconductor module: MOSFET transistor Power dissipation: 244W Technology: SiC Drain current: 153A Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: Press-in PCB Gate-source voltage: -4...18V Semiconductor structure: transistor/transistor On-state resistance: 8mΩ Topology: MOSFET half-bridge; NTC thermistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 16 Stücke Im Einkaufswagen Stück im Wert von UAH |
| WMSC008H12B1P6T |
|
Hersteller: WeEn Semiconductors
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Pulsed drain current: 300A
Type of semiconductor module: MOSFET transistor
Power dissipation: 244W
Technology: SiC
Drain current: 153A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-source voltage: -4...18V
Semiconductor structure: transistor/transistor
On-state resistance: 8mΩ
Topology: MOSFET half-bridge; NTC thermistor
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Pulsed drain current: 300A
Type of semiconductor module: MOSFET transistor
Power dissipation: 244W
Technology: SiC
Drain current: 153A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-source voltage: -4...18V
Semiconductor structure: transistor/transistor
On-state resistance: 8mΩ
Topology: MOSFET half-bridge; NTC thermistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen
Stück im Wert von UAH