Technische Details WMSC010H12B1P6T Ween
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W, On-state resistance: 10mΩ, Topology: MOSFET half-bridge; NTC thermistor, Technology: SiC, Electrical mounting: Press-in PCB, Type of semiconductor module: MOSFET transistor, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Gate-source voltage: -4...18V, Power dissipation: 152W, Drain current: 107A, Drain-source voltage: 1.2kV, Pulsed drain current: 210A.
Weitere Produktangebote WMSC010H12B1P6T
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| WMSC010H12B1P6T | Hersteller : WeEn Semiconductors |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W On-state resistance: 10mΩ Topology: MOSFET half-bridge; NTC thermistor Technology: SiC Electrical mounting: Press-in PCB Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Semiconductor structure: transistor/transistor Gate-source voltage: -4...18V Power dissipation: 152W Drain current: 107A Drain-source voltage: 1.2kV Pulsed drain current: 210A |
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