WNSC201200WQ WeEn Semiconductors
Hersteller: WeEn Semiconductors
Schottky Diodes & Rectifiers WNSC201200W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK
| Anzahl | Preis |
|---|---|
| 1+ | 19.22 EUR |
| 10+ | 17.35 EUR |
| 100+ | 16.33 EUR |
| 3000+ | 12.74 EUR |
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Technische Details WNSC201200WQ WeEn Semiconductors
Description: DIODE SIL CARB 1.2KV 20A TO247-2, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Current - Reverse Leakage @ Vr: 220 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Last Time Buy, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 1.02nF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Package / Case: TO-247-2, Packaging: Tube.
Weitere Produktangebote WNSC201200WQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| WNSC201200WQ | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARB 1.2KV 20A TO247-2 Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 220 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Last Time Buy Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 1.02nF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Package / Case: TO-247-2 Packaging: Tube |
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