Technische Details WNSC2D03650MBJ Ween
Description: DIODE SIL CARBIDE 650V 3A SMB, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 130pF @ 1V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: SMB, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.
Weitere Produktangebote WNSC2D03650MBJ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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WNSC2D03650MBJ | Hersteller : WeEn Semiconductors |
 Description: DIODE SIL CARBIDE 650V 3A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
Produkt ist nicht verfügbar |
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WNSC2D03650MBJ | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 3A SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
Produkt ist nicht verfügbar |
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| WNSC2D03650MBJ | Hersteller : WeEn Semiconductors |
Schottky Diodes & Rectifiers WNSC2D03650MB/SMB/REEL 13" Q1/T1 *STANDARD MARK SMD |
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| WNSC2D03650MBJ | Hersteller : WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SiC; SMD; 650V; 3A; reel,tape Technology: SiC Case: SMB Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 18A Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Load current: 3A Max. load current: 6A |
Produkt ist nicht verfügbar |