WNSC2D04650XQ WEEN SEMICONDUCTORS
Hersteller: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - WNSC2D04650XQ - SiC-Schottky-Diode, Einfach, 650 V, 4 A, 6.5 nC, TO-220F
tariffCode: 85411000
Bauform - Diode: TO-220F
Kapazitive Gesamtladung: 6.5nC
euEccn: NLR
rohsCompliant: YES
Diodenmontage: Durchsteckmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: Y
Durchschnittlicher Durchlassstrom: 4A
SVHC: To Be Advised
Anzahl der Pins: 2 Pins
Produktpalette: -
productTraceability: No
usEccn: EAR99
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
| Anzahl | Privatkunde |
|---|---|
| 71+ | 3.52 EUR |
| 144+ | 1.62 EUR |
| 167+ | 1.29 EUR |
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Technische Details WNSC2D04650XQ WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - WNSC2D04650XQ - SiC-Schottky-Diode, Einfach, 650 V, 4 A, 6.5 nC, TO-220F, tariffCode: 85411000, Bauform - Diode: TO-220F, Kapazitive Gesamtladung: 6.5nC, euEccn: NLR, rohsCompliant: YES, Diodenmontage: Durchsteckmontage, hazardous: false, rohsPhthalatesCompliant: YES, Diodenkonfiguration: Einfach, Qualifikation: -, isCanonical: Y, Durchschnittlicher Durchlassstrom: 4A, SVHC: To Be Advised, Anzahl der Pins: 2 Pins, Produktpalette: -, productTraceability: No, usEccn: EAR99, Periodische Spitzensperrspannung: 650V, Betriebstemperatur, max.: 175°C.
Weitere Produktangebote WNSC2D04650XQ nach Preis ab 1.02 EUR bis 3.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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WNSC2D04650XQ | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 4A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 125pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
auf Bestellung 2696 Stücke: Lieferzeit 10-14 Tag (e) |
|
| WNSC2D04650XQ |
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2696 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.53 EUR |
| 50+ | 1.7 EUR |
| 100+ | 1.52 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.11 EUR |
| 2000+ | 1.02 EUR |