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WNSC2D04650XQ

WNSC2D04650XQ WeEn Semiconductors


Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2696 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
50+1.43 EUR
100+1.28 EUR
500+1.01 EUR
1000+0.93 EUR
2000+0.86 EUR
Mindestbestellmenge: 6
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Technische Details WNSC2D04650XQ WeEn Semiconductors

Description: DIODE SIL CARBIDE 650V 4A TO220F, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 125pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-220F, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.

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WNSC2D04650XQ WNSC2D04650XQ Hersteller : WeEn Semiconductors Schottky Diodes & Rectifiers WNSC2D04650X/TO220F-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK
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