WNSC2D051200D6J WeEn Semiconductors

Description: DIODE SIL CARBIDE 1200V 5A DPAK, Voltage Coupled to Current - Reverse Leakage @ Vr: 1200, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5, Current - Reverse Leakage @ Vr: 25 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A, Part Status: Active, Packaging: Tape & Reel (TR), Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DPAK, Current - Average Rectified (Io): 5A, Capacitance @ Vr, F: 260pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.