WNSC2D06650DJ WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A DPAK
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details WNSC2D06650DJ WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A DPAK, Current - Reverse Leakage @ Vr: 30 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C, Supplier Device Package: DPAK, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 198pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote WNSC2D06650DJ nach Preis ab 1.46 EUR bis 4.5 EUR
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WNSC2D06650DJ | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 6A DPAK Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C Supplier Device Package: DPAK Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 198pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
auf Bestellung 5198 Stücke: Lieferzeit 10-14 Tag (e) |
|
| WNSC2D06650DJ |
|
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A DPAK
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 6A DPAK
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 5198 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.5 EUR |
| 10+ | 2.89 EUR |
| 100+ | 1.98 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.46 EUR |