WNSC2D06650DJ WeEn Semiconductors
Hersteller: WeEn SemiconductorsDescription: DIODE SIL CARBIDE 650V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.26 EUR |
| 5000+ | 1.21 EUR |
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Technische Details WNSC2D06650DJ WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 198pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: DPAK, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Current - Reverse Leakage @ Vr: 30 µA @ 650 V.
Weitere Produktangebote WNSC2D06650DJ nach Preis ab 1.33 EUR bis 2.8 EUR
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WNSC2D06650DJ | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 198pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
auf Bestellung 7201 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D06650DJ | Hersteller : WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 36A Load current: 6A Anzahl je Verpackung: 2500 Stücke |
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WNSC2D06650DJ | Hersteller : WeEn Semiconductors |
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WNSC2D06650DJ | Hersteller : WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 36A Load current: 6A |
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