WNSC2D101200D6J WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 1200V 10A DPAK
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 481pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
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Technische Details WNSC2D101200D6J WeEn Semiconductors
Description: DIODE SIL CARBIDE 1200V 10A DPAK, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Part Status: Active, Packaging: Bulk, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DPAK, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 481pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns.
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Verfügbarkeit |
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| WNSC2D101200D6J | Hersteller : WeEn Semiconductors |
Schottky Diodes & Rectifiers WNSC2D101200D/TO252/REEL 13" Q1/T1 *STANDARD MARK SMD |
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