WNSC2D10650Q WeEn Semiconductors
Hersteller: WeEn Semiconductors
SiC Schottky Diodes WNSC2D10650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK
| Anzahl | Preis |
|---|---|
| 1+ | 4 EUR |
| 10+ | 2.53 EUR |
| 100+ | 1.85 EUR |
| 500+ | 1.57 EUR |
| 1000+ | 1.32 EUR |
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Technische Details WNSC2D10650Q WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220AC, Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 310pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote WNSC2D10650Q nach Preis ab 1.92 EUR bis 4.63 EUR
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WNSC2D10650Q | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARB 650V 10A TO220AC Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 310pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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