WNSC2D16650CWQ WeEn Semiconductors
Hersteller: WeEn Semiconductors
SiC Schottky Diodes WNSC2D16650CW/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.9 EUR |
| 240+ | 5.01 EUR |
| 1200+ | 3.81 EUR |
| 2640+ | 3.61 EUR |
| 5040+ | 3.53 EUR |
| 10080+ | 3.47 EUR |
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Technische Details WNSC2D16650CWQ WeEn Semiconductors
Description: DIODE ARRAY SIC 650V 16A TO247-3, Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-247-3, Current - Average Rectified (Io) (per Diode): 16A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote WNSC2D16650CWQ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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WNSC2D16650CWQ | WeEn Semiconductors |
Description: DIODE ARRAY SIC 650V 16A TO247-3 Current - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-247-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 480 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
WNSC2D16650CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. forward voltage: 1.8V Load current: 8A x2 Max. load current: 16A Max. forward impulse current: 48A Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| WNSC2D16650CWQ |
|
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SIC 650V 16A TO247-3
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARRAY SIC 650V 16A TO247-3
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 480 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| WNSC2D16650CWQ |
|
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.8V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.8V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH