WNSC2D201200WQ WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 1200V 20A TO2472
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 2+ | 14.26 EUR |
| 10+ | 9.77 EUR |
| 100+ | 7.24 EUR |
| 600+ | 6.44 EUR |
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Technische Details WNSC2D201200WQ WeEn Semiconductors
Description: DIODE SIL CARB 1200V 20A TO2472, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 845pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.
Weitere Produktangebote WNSC2D201200WQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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WNSC2D201200WQ | Hersteller : WeEn Semiconductors |
Schottky Diodes & Rectifiers WNSC2D201200W/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK |
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