WNSC2D20650CWQ WeEn Semiconductors
Hersteller: WeEn Semiconductors
SiC Schottky Diodes WNSC2D20650CW/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK
| Anzahl | Preis |
|---|---|
| 1+ | 6.55 EUR |
| 10+ | 4.38 EUR |
| 100+ | 3.38 EUR |
| 480+ | 2.97 EUR |
| 1200+ | 2.68 EUR |
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Technische Details WNSC2D20650CWQ WeEn Semiconductors
Description: DIODE ARRAY SIC 650V 20A TO247-3, Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-247-3, Current - Average Rectified (Io) (per Diode): 20A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote WNSC2D20650CWQ nach Preis ab 3.95 EUR bis 7.73 EUR
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WNSC2D20650CWQ | Hersteller : WeEn Semiconductors |
Description: DIODE ARRAY SIC 650V 20A TO247-3Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-247-3 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 445 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D20650CWQ | Hersteller : WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 50A Kind of package: tube Max. load current: 20A |
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